High speed InP/InGaAs uni-traveling-carrier photodiodes

High-speed and high-saturation output InP-based uni-traveling-carrier photodiodes (UTC-PDs) have been developed. The structural feature of the devices is that the diode is configured with a p-type photo-absorption layer and a wide-gap electron collector layer. Fabricated UTC-PDs yielded a 3-dB bandwidth of over 100 GHz with operating current density of 200 kV/cm/sup 2/ or over. This paper examines the bandwidth and RF saturation characteristics of UTC-PDs. We also present an optical receiver utilizing a UTC-PD for high-speed fiber-optic communication systems.