Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes

Rapid progress has been made in the growth of GaInNAs-GaAs by solid source molecular beam epitaxy, leading to significant improvements of such heterostructures for 1.3-μm wavelength laser emission. We report on growth, device fabrication and characteristics of ridge-waveguide lasers in this material system. Performance data of these devices (emission at /spl lambda/=1.29 μm, threshold currents of 16 mA, slope efficiencies of 0.35 W/A per facet, and continuous-wave (CW) operation at 100/spl deg/C) prove that this new material can successfully compete with the well matured InGaAsP-InP system. Furthermore, the very first small-signal modulation measurement results of laser diodes in this novel material-system as well as first ageing results are presented.