Performance of Stacked Nanosheets Gate-All-Around and Multi-Gate Thin-Film-Transistors

This comprehensive study of the horizontally p-type stacked nanosheets inversion mode thinfilm transistor with gate-all-around (SNS-GAATFT) and multi-gate (SNS-TFT) structures. The stacked nanosheets device structure, fabrication, and electrical characteristics are analyzed. The SNS-GAATFT reveals better performance to multi-gate SNS-TFT. The proposed inversion mode SNS-TFT has properties of the easy process with low cost and compatible with all 3-D Si CMOS and AMOLED applications. Moreover, the SNS-GAATFT is suitable for future monolithic 3-D IC for 2015’s ITRS technology roadmap for the year 2024–2030.