Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 /spl Aring/

Electrical and reliability properties of ultrathin La
₂
O
₃
gate dielectric have been investigated. The measured capacitance of 33 /spl Aring/ La
₂
O
₃
gate dielectric is 7.2 μF/cm
²
that gives an effective K value of 27 and an equivalent oxide thickness of 4.8 /spl Aring/. Good dielectric integrity is evidenced from the low leakage current density of 0.06 A/cm
²
at -1 V, high effective breakdown field of 13.5 MV/cm, low interface-trap density of 3×10/sup 10/ eV/sup -1//cm
²
, and excellent reliability with more than 10 years lifetime even at 2 V bias. In addition to high K, these dielectric properties are very close to conventional thermal SiO
₂
.