A high-endurance low-temperature polysilicon thin-film transistor EEPROM cell

A planar type polysilicon thin-film transistor (poly-Si TFT) EEPROM cell with electron cyclotron resonance (ECR) N/sub 2/O-plasma oxide has been developed with a low temperature (/spl les/400/spl deg/C) process. The poly-Si TFT EEPROM cell has an initial threshold voltage shift of 4 V for programming and erasing voltages of 11 V and -11 V, respectively. Furthermore, the poly-Si TFT EEPROM cell maintains the threshold voltage shift of 4 V after 100 000 program/erase cycles. The excellent high endurance of the fabricated poly-Si TFT EEPROM cell is attributed to the ECR N/sub 2/O-plasma oxide with good charge-to-breakdown (Qbd) characteristics.