Simplified method to investigate quantum mechanical effects in MOS structure inversion layer

A simplified method to calculate the band bending and subband energies is employed to investigate quantum mechanical effects (QMEs) in MOS structure inversion layer. The subband structure and the two-dimensional (2-D) density-of-states in semi-classical and quantum mechanical cases are then calculated. The well-known band-gap widening model is analyzed through a density-of-states point of view and a new scheme to analyse and model QMEs in an MOS inversion layer is proposed.