A physically-based semi-empirical series resistance model for deep-submicron MOSFET I-V modeling

A physically-based series resistance model for deep-submicron MOSFET is presented, which includes a bias-dependent (intrinsic) component and a bias-independent (extrinsic) component. The model is semi-empirical and consists of two physics-based fitting parameters to be extracted with a single measurement, which can be extended to all gate-length and bias conditions. The model can be applied to drain-current prediction and optimization due to process fluctuations such as LDD junction depth and spacer thickness.