Monte Carlo study of sub-0.1 /spl mu/m Si/sub 0.97/C/sub 0.03//Si MODFET: electron transport and device performance

We study the electron transport in tensile strained Si/sub 1-y/C/sub y/ pseudomorphically grown on Si(100) substrate, and in n-channel short gate Si/sub 1-y/C/sub y//Si MODFETs using an ensemble Monte Carlo simulation. The alloy potential in Si/sub 1-y/C/sub y/ is used as a parameter, ranging from 0 to 2 eV. When the alloy scattering reduces drastically the intrinsic transport properties in Si/sub 1-y/C/sub y/ alloys, the nonstationary transport occurring in ultrashort gate MODFETs decreases the influence of scattering processes. The device performance can then fully benefit from the strain-induced reduction of effective mass.