Short channel MOSFET model using a universal channel depletion width parameter

We verified a critical rendition that short channel effects depend on junction depth, and showed that junction depth by itself is not important for improving short channel immunity. The depletion region width of a short channel device changes significantly depending on the location along the channel. We proposed a universal channel depletion width parameter that effectively expresses this dependence. Using this parameter, we solved a two-dimensional (2-D) potential distribution and derived a threshold voltage model. The model reproduces the numerical data of sub-0.1-/spl mu/m gate length devices, including channel doping concentration, gate oxide thickness, drain voltage, and back bias dependencies.