Design and characterization of superlattice infrared photodetector operating at low bias voltage

In this paper, we investigate the performance and characterization of a 15-period superlattice embedded between two thick AlGaAs barriers. The structure can operate at low bias voltage with less power consumption for 8-10 /spl mu/m long-wavelength infrared detection. In our design, one barrier is used to reduce the dark current and the other one is designed to enhance the collection efficiency of photoelectrons at the collector contact. The fabricated detector can be operated at a bias voltage lower than 0.1 V and exhibits a pronounced photovoltaic response. The spectral response shows voltage dependence around 0 V. At high bias voltage (>25 mV) the spectral lineshape is independent of bias and is around 8-10 /spl mu/m with peak wavelength at 9.3 /spl mu/m. At lower bias voltage the response is shifted toward shorter wavelength range. The peak responsivity was found to be 12 mA/W at /spl lambda//sub p/=8.7 /spl mu/m and zero bias and 85 mA/W at /spl lambda//sub p/=9.3 /spl mu/m and 0.1 V. Background limitation can be achieved up to 65 K with bias voltage less than 0.1 V. The measured noise power spectral density of the dark current at 77 K shows the characteristics of full shot noise rather than generation-recombination noise. The peak detectivity is determined to be D/sup */=3.5/spl times/10/sup 9/ cm/spl radic/(Hz)/W at 77 K and 0.1 V. In comparison with a conventional 30-period QWIP, our detector has the advantages of better performance at low bias voltages with lower power consumption and a tunable feature of spectral range.