Lateral $\beta$ -Ga2O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV

In this paper, we report on achieving the first high performance lateral
$\beta $
-Ga
₂
O
₃
Schottky barrier diode (SBD) on sapphire substrate via transferring
$\beta $
-Ga
₂
O
₃
nano-membrane channel from a low dislocation density bulk
$\beta $
-Ga
₂
O
₃
substrate. Non field-plated lateral SBDs with Schottky–Ohmic contact distance of 4, 6, 11, and
$15 \mu$
m demonstrate a reverse breakdown voltage (BV) of 0.64, 0.85, 1.2, and 1.7 kV with on resistance (
$R_\text {on}$
) of 47, 66, 91, and 190
$\omega \cdot $
mm, respectively. This lateral
$R_{\text {on}, \text{sp}}$
~ BV performance is comparable to that of vertical SBDs. Combining with 10
⁷
~ 10
⁸
high temperature current on/off ratio,
$\beta $
-Ga
₂
O
₃
SBD shows its great promise for power rectifying once the
$\beta $
-Ga
₂
O
₃
drift layer epitaxial growth becomes more mature.