The experimental study on the temperature characteristics of the BRT and the EST

The high temperature characteristics of a BRT (Base Resistance controlled Thyristor) and a DCEST (Dual-Channel Emitter Switched Thyristor) were measured and compared. At the current density of 200 A/cm/sup 2/, the forward voltage drop of the BRT is 1.50 V at 25/spl deg/C, 1.45 V at 75/spl deg/C and 1.41 V at 125/spl deg/C, while that of the DCEST is 2.67 V at 25/spl deg/C, 2.79 V at 75/spl deg/C and 3.27 V at 125/spl deg/C. The BRT had the lower forward voltage drop than the DCEST and the DCEST had a negative feedback of the temperature. Both devices were fabricated using an IGBT-like process sequences and their forward I-V characteristics were measured under the ambient temperature range from 25/spl deg/C to 125/spl deg/C.