High gain high power-added-efficiency self-aligned AlGaAs/GaAs HBTs suitable for wireless communication application

This paper reports an experimental investigation of the power performance of self-aligned AlGaAs-GaAs HBTs at frequency 2.5 GHz, which is of interest for wireless application. On-wafer power measurement on a 3 /spl mu/m/spl times/15 /spl mu/m single-emitter HBT exhibited a 18.2 dB power gain with 100 mW output power (power density of 6.7 W/mm) at 1 dB gain compression point with PAE of 61.4%. As compared to the re-aligned approach, the self-aligned device achieved a power gain improvement of about 2 dB on average.