Modeling Thermal Performance of Nano-GNRFET Transistors Using Ballistic-Diffusive Equation

This paper inquires the phonon transport and temperature distribution in graphene nanoribbon field-effect transistor (GNRFET). We propose a modified Ballistic-diffusive equation model (BDE) to explore the phonon transport in GNRFET transistors. In addition, we have studied the effect of the channel length on thermal characteristics. Finite-element approximation used to study the temperature distribution in nano-GNRFET. The proposed model has been validated on the basis of available results from the literature. Our results shows that phonon transport predicted by the proposed BDE model is close to that obtained by Boltzmann transport equation. We found that the proposed model is able to estimate the thermal performance of GNRFET. The results prove also that the characteristic length of the GNR has no important role in the increasing of the temperature.