Ultra-Wideband Microwave Generation Using a Low-Energy-Triggered Bulk Gallium Arsenide Avalanche Semiconductor Switch With Ultrafast Switching

Generation of ultra-wideband microwave utilizing a low-energy-triggered bulk gallium arsenide (GaAs) avalanche semiconductor switch with ultrafast switching is presented. The switch biased at 5.2 kV is able to reach the conducting state with a time as low as ~200 ps, and a 5.6-nJ laser is required. The switching transient features such as delay, ultrafast switching, and voltage locking are described and explained by multiple powerful avalanche domains, and a comparison with previous discussions and findings available in the literatures is provided. The application of the bulk GaAs avalanche semiconductor switches for generating ultra-wideband microwave is demonstrated. We produce a bipolar pulse with peak-to-peak voltage amplitude of ~5 kV and a unipolar pulse with peak amplitude of ~10 kV.