Modelling and performance analysis of asymmetric double gate stack-oxide junctionless FET in subthreshold region

A modified analytical model for asymmetric Double Gate Stack-Oxide Junctionless Field Effect Transistor (DGS-JLFET) in subthreshold region is presented in this paper. The simulation results obtained from this model are used to make a performance analysis for the described device. The potential distribution and some short channel effects such as on-off ratio (Ion/Ioff), threshold voltage roll-off (TVRO), subthreshold swing (SS) for asymmetric DGS-JLFET in subthreshold region has been observed. Comparative analysis shows that this asymmetric device has better performance than symmetric ones.