Substrate effects on channel temperature distribution of AlGaN/GaN HEMT

The channel temperature distribution of AlGaN/GaN HEMT on various substrates including Sapphire, Si, SiC, and Diamond is presented. A 2D electro-thermal model is used here. Joule heating is calculated and incorporated into the thermal model to find the temperature distribution which gives an idea of the maximum temperature in the channel. A comparative study is made on different substrates at different power density. The simulated results will be helpful for better temperature managing of AlGaN/GaN HEMT.