Low-threshold oxide-confined 1.3-μm quantum-dot laser

Data are presented on low threshold, 1.3-μm oxide-confined InGaAs-GaAs quantum dot lasers. A very low continuous-wave threshold current of 1.2 mA with a threshold current density of 28 A/cm
²
is achieved with p-up mounting at room temperature. For slightly larger devices the continuous-wave threshold current density is as low as 19 A/cm
²
.