High-performance GaN-based green LEDs

The performance of a ~540 nm has been investigated for GaN-based green light-emitting diodes (LEDs). GaN-based LEDs are currently the most promising candidate for solid-state lighting (SSL). The mathematical model has formed in MATLAB software. The electrical properties, including I-V characteristics, IQE, EQE and output power or L-I characteristics were also investigated. We focused on a ~540 nm LED, which produces the highest output power of 420 mW. Only 75% droop efficiency prospects at current density, j_max =13.09 A/cm² likened to peak value, revealing that GaN-based LEDs are pledging for future green lighting with high-performance logic devices, especially for solid state lighting. These results apprise that proposed devices are reliable candidate for future highspeed, high performance (HP) logic devices.