Parallel sensing operation using octagonal MOSFET

In this paper, temperature and magnetic field detectable Octagonal MOSFET sensor are designed and evaluated. In previous works, one sensor device, such as resistor, capacitor, and etc., can detect only one physical or chemical phenomenon. In order to acquire a lot of information about the outside world, many sensors are necessary. Thus, sensor system may become large. However, multi sensing operation is available for pro-posed sensor device, octagonal MOSFET type Hall sensor. This sensor can detect both magnetic field and temperature at the same time. As the results, we can realize that the sensitivity of magnetic field and temperature are 16.3 mV/T and 0.053 mV/°C, respectively.