A 40-nm CMOS V-band single-pole quadruple-throw absorptive switch for phased-array applications

This paper proposes a single-pole quadruple-throw absorptive-type switch using 40-nm CMOS for 60-GHz phased-array applications. Based on the conventional series-shunt architecture, resonant technique is adapted for the series switch to improve the isolation. In addition, a high-impedance transmission line is placed between the series and the shunt switches to compensate the parasitic capacitors for on-state switch and increase the input impedance of the off-state switch. The proposed switch demonstrates a measured insertion loss of better than 4.3 dB, and the measured isolation is better than 18.2 dB from 57 to 66 GHz. The chip size is only 0.62 mm×0.44 mm including all test pads.