Design of active inductor at 2.4 GHz frequency using 180 nm CMOS technology

In this work, a CMOS active inductor has been designed using UMC 180 nm CMOS technology. The architecture of the active inductor is based on gyrator-C topology using active components. The intrinsic capacitance value of the MOSFETs has been transformed to the inductance value by designing and optimizing the parameters that affect the inductance value in the circuit. In addition to this, the quality factor of the inductor and power consumption of the design has also been studied and the results are compared. Two designs have been investigated one for high value of inductance (in the range of 12.2nH-14.3nH) with moderate quality factor (307) and another for high value of quality factor (1334) with moderate range of inductance values (6.79nH-7.4nH). From the results it has been observed that the active inductor based RF circuits consume less area compared to the circuits having passive inductors for similar inductance values.