Reduction of Variability in Junctionless and Inversion-Mode FinFETs by Stringer Gate Structure

Variabilities such as threshold voltage, on-current, and subthreshold swing due to random dopant fluctuation (RDF), work function variation (WFV), and line edge roughness (LER) are studied in junctionless (JL) stringer FinFETs and compared with inversion-mode devices using technology computer-aided design analysis. Compared with a conventional JL FinFET, the stringer gate JL FinFET shows suppressed variabilities due to RDF, WFV, and LER with better gate controllability and larger effective gate length, respectively.