20 V and 8 V lateral trench gate power MOSFETs with record-low on-resistance

We propose a novel lateral trench gate power MOSFET which utilizes narrow and shallow multiple trenches as channel regions. The developed device achieved 13 m/spl Omega//spl middot/mm/sup 2/ and 5 m/spl Omega//spl middot/mm/sup 2/ of on-resistance with the breakdown voltage of 25 V, 11 V respectively, which is the record tow on-resistance among the previous works.