A new observation of band-to-band tunneling induced hot-carrier stress using charge-pumping technique [MOSFETs]

The lateral distributions of interface-states (N/sub it/) and oxide-trapped charges (Q/sub ox/) generated by band-to-band tunneling (BTBT) induced hot-carrier stress are analyzed by the new charge-pumping method. It is shown that the interface-states and oxide-trapped charges should originate from different types of carriers due to the separation of the locations of their peak values. The further evidence of the measured distribution of the interface-states in the band-gap shows that the carriers travelling toward the gate edge would be the dominant carrier for the generation of interface-states while the carriers travelling away from the gate edge will generate oxide-trapped charges through the help of the vertical electric field. These results should be very useful for the reliability analysis of flash memories.