Low-threshold 1.3-μm InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy

1.3-μm InGaAsN:Sb-GaAs single-quantum-well laser diodes have been grown by a solid source molecular beam epitaxy (MBE) using Sb as a surfactant. A record low threshold of 1.02 kA/cm
²
and a slope efficiency of 0.12 W/A are obtained for broad-area laser diodes under pulsed operation at room temperature. A characteristic temperature of 64 K and a lasing wavelength temperature dependence of 0.38 nm//spl deg/C are reported.