Oxide-defined GaAs vertical-cavity surface-emitting lasers on Si substrates

By employing a reactive low-temperature wafer bonding technique, we have demonstrated oxide-defined 850 nm vertical-cavity surface-emitting lasers (VCSEL's) on Si substrates. Devices reach a differential quantum efficiency of 53% and a light output power of 7.1 mW under room temperature and continuous-wave operation without a heat sink.