Characterization and simulation of GaSb device-related properties

Device related parameters of GaSb are characterized and simulated based on measurements of photovoltaic cells. Internal quantum efficiencies are simulated to quantify the contributions from band-gap narrowing and the main recombination mechanisms, such as Auger, radiative, and Shockley-Read-Hall recombination. A detailed study of the recombination mechanisms values shows differences between literature data and data derived from comparison of simulation results with measurements on real devices. A new evaluation of these data is given. The evaluation of the band-gap narrowing in n-GaSb is performed by comparison of measurements and simulations of the injection component of the dark current I/sub 01/ and open-circuit voltage. For the first time, a range of possible values for the intrinsic carrier concentration of GaSb at room temperature is given, based on theoretical calculations, and proven with comparison of measured lot and open-circuit voltages of GaSb photovoltaic devices.