High-contrast electron-transfer GaAs-AlGaAs multiple-quantum-well waveguide modulator

The development of a GaAs-AlGaAs multiple quantum well electron transfer waveguide modulator is reported. On-off ratios as high as 75:1 are obtained at 864.5 nm of an applied voltage of -5 to 10 V. It is shown that the wavelength and voltage characteristics of the device can be successfully interpreted in terms of the calculated energy band diagram.<
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