High temperature characteristics of highly strained 1.2 /spl mu/m InGaAs/GaAs quantum well lasers

We have demonstrated highly strained 1.2 /spl mu/m InGaAs/GaAs double quantum well lasers with excellent temperature characteristics. The threshold current density was as low as 340 A/cm/sup 2/ for a 2 mm long broad-area laser. A record high characteristic temperature of 154 K was obtained up to 140/spl deg/C for a 540 /spl mu/m long ridge waveguide laser.