Electrical and charge trapping properties of HfO2/Al2O3 multilayer dielectric stacks

In this paper the electrical and trapping characteristics of multilayer HfO
2
/Al
2
O
3
dielectric stacks on silicon as a potential device for flash memory applications were investigated. Trapping phenomena have been studied by evaluating the memory window, i.e. the flat-band voltage shift of high frequency C-V curves after application of series of positive and negative voltages. The influence of post-deposition annealing in different ambient is also investigated.