A novel low noise IMPATT diode

IMPATT diodes are currently the main solid state source of power at the higher millimeter-wave frequencies, but can suffer from high noise levels, low efficiency and low reliability, particularly when driven for high power. In the present paper a new concept is proposed which can yield essentially noise free avalanche multiplication at high frequency and should improve both efficiency and reliability. The proposed structures require a layer of narrow gap material adjacent to a wide gap avalanche zone.