Impact of ultrashallow junction on hot carrier degradation of sub-0.25-μm nMOSFETs

We have investigated the hot carrier (HC) reliability of nMOSFETs with an ultrashallow source/drain (S/D) extension, and found that lightly doped drain (LDD)-type HC degradation is accelerated. The lifetime strongly depends on the extension implantation dose or the implantation angle. A reduced overlap region between the gate electrode and drain diffusion seemed to exaggerate the LDD-type HC degradation. Angled implantation at over 10/spl deg/ effectively suppressed the degradation.