Thermal resistance measurements for AlGaAs/GaAs heterojunction bipolar transistors

A method for the measurement of the thermal resistance of heterojunction bipolar transistors (HBTs) has been developed. The measurement technique is described and its application is illustrated. Results for single-emitter HBTs are explained with the help of a model for HBT thermal resistance. Measured values agree with the predictions of the model for heat flow for single-emitter HBTs.<
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