Using a passive GaAs matching network in the fabrication of broadband microwave power amplifiers

Possibilities, advantages and disadvantages of the use of GaAs passive matching networks in the construction of broadband microwave power amplifiers are discussed. The technology of fabrication and design features of passive matching chips are described. The topologies of passive matching chips and electrical characteristics of broadband two-stage power amplifiers in the 4-8 GHz and 4-11 GHz bands with an output power 0.65-1.6 W are presented.