Range studies of aluminum, boron, and nitrogen implants in 4H-SiC

Ion implantation is the only suitable method for selective area doping of silicon carbide because of the small diffusivity of impurities. For device processing, knowledge of depth and shape of impurity profiles is crucial. In this study, aluminum, boron, and nitrogen ions were implanted into 4H-SiC within a wide energy range of 10-400 keV. The depth distributions were analyzed by both secondary ion mass spectrometry and an optimized fit routine to extract the range parameters. Together with new fit formulas for the range moments a significantly improved simulator for ion profiles is established. A modified electronic stopping power is given for TRIM and RAMM, respectively, to simulate profiles in amorphized hexagonal silicon carbide. The dose dependence of aluminum profiles is investigated as well.