Comparison of GaInNAs/GaAs and strain-compensated InGaAs/GaAsP quantum wells for 1200-1300 nm diode lasers

We investigate the optical properties (photoluminescence and photoluminescence excitation spectra) of GaInNAs/GaAs quantum wells and discuss problems caused by the presence of nitrogen in the wells. The use of InGaAs(N)/GaAsP strain-balanced structures is suggested to improve device characteristics through the reduction of the nitrogen amount required to achieve 1.3 /spl mu/m emission. Especially, we demonstrate that 1.2 /spl mu/m emission can already be achieved in InGaAs/GaAsP structures without any nitrogen.