Heterogeneous integration of GaAs-based lasers with GaN-based light sources

Summary form only given. Wafer fusion of GaAs-based laser heterostructures to GaN heterostructures has been demonstrated. Using red/infrared laser heterostructures fused to GaN-based LED material, closely spaced (50 /spl mu/m) red and infrared lasers were operated along with adjacent blue LEDs, forming a monolithic multiwavelength array of light emitters.