Transferred-electron device as a large-signal laser driver

A description is presented of the use of a transferred-electron device (TED) as a laser driver for optical communication. This concept is particularly advantageous for the long-wavelength range around 1.3 and 1.55 mu m, since InGaAs, lattice-matched to InP, offers the largest current pulse originating from the TE-effect. Moreover large-signal control, inherent pulse shaping at bit rates in the Gbit/s range, and simple fabrication are afforded. The authors simulate the behavior of the TED and find good agreement with experiments. The monolithic integration of a TED and a laser diode compares favorably with current switch circuits in terms of space requirement, speed, and power dissipation.<
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