High performance bipolar resistive switching characteristics in SiO2/ZrO2/SiO2 tri-layer based CBRAM device

The bipolar resistive switching properties of the CBRAM device are investigated for nonvolatile memory applications in a SiO2/ZrO2/SiO2 structure. The device shows good switching characteristics with set/reset voltages less than + 1 V/−1 V with a variation of less than 0.2 V. The SiO2/ZrO2/SiO2 tri-layer CBRAM device exhibits excellent memory performances, such as stable DC endurance up to 10³ cycles during the test without degradation, good retention ability (>10⁴ s) at a temperature of 100 °C with more than 10² on/off resistance ratio.