Charge plasma based graded channel with dual material double gate JLT for enhance analog/RF performance

In this paper, charge plasma based dual material graded channel double gate (DMGCDG) junctionless transistor is proposed. The charge plasma concept based graded channel is implemented without using separate ion implantation. A dual material gate with two different workfunctions produce additional electric field at source side to enhance the carrier transport efficiency as compared to graded channel double gate (GCDG) however at drain side lower electric field reduces the hot carrier effect (HCE). The simulation results show that the device exhibits increased ON current, reduced drain induced barrier lowering (DIBL) and enhanced analog/RF performance as compared to GCDG.