Physics-based modeling of sige HBTs with fj of 450 GHz with HICUM Level 2

SiGe HBT technologies have increasingly seen improvements in their maximum operating speed. These are attributed to aggressive vertical and lateral device scaling. While the latter is generally captured by scaling equations for model parameters, physical effects caused by the former need to be described by the model equations. Examples for effects that gain importance with shrinking device dimensions are the impact of quasi-ballistic transport in the base and non-local effects in the collector of the transistor. This paper shows the application of HICUM/L2 to the latest generation of very high-speed SiGe HBTs and demonstrates the accurate modeling of the important device characteristics as well as the possibility to extract the parameters of the corresponding 1D transistor.