PtSe2 Field-Effect Transistors: New Opportunities for Electronic Devices

PtSe
₂
, a new family of transition metal dichalcogenides, has been explored for electronic device applications using density functional theory and non-equilibrium Green's function within the third nearest neighbor tight-binding approximation. Interestingly, despite its small effective mass (m
_e
* as low as 0.21m
₀
; m
₀
being electron rest mass), PtSe
₂
has large density of states due to its unique six-valley conduction band within the first Brillouin zone, unlike MoX
₂
family. This has direct impacts on the device characteristics of PtSe
₂
field-effect transistors, resulting in superior on-state performance (30% higher on current and transconductance) as compared with the MoSe
₂
counterpart. Our simulation shows that the PtSe
₂
device with a channel longer than 15 nm exhibits near-ideal subthreshold swing, and sub-100 mV/V of drain-induced barrier lowering can be achieved with an aggressively scaled gate oxide, demonstrating new opportunities for electronic devices with novel PtSe
₂
.