A C-band low power high dynamic range GaAs MESFET low noise amplifier

A low power high dynamic range C-band GaAs MESFET low noise cascode amplifier is presented. An accurate small signal model and a noise model of the device based upon measurement are developed for the LNA design. At 5 GHz, a 50 /spl Omega/ noise figure of 1.9 dB and an IIP3 of 5 dBm are measured at a power consumption of 13.2 mW from a 3 V DC supply. The measurement results show good agreement with simulation results. This design has the highest IIP3 compared to other GaAs MESFET LNAs at this frequency range.