Performance and Power Consumption Trade-Off in UTBB FDSOI Inverters Operated at NTV for IoT Applications

Power consumption and I
_on
/I
_off
ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations. TCAD outputs (current, voltage, and capacitance) were used as parameters to solve the inverter circuit. Besides, a bias operation point (V
_OP
) has been proposed, which provides a good trade-off between the I
_on
/I
_off
ratio and the energy consumption. Variations of this operation point, due to the presence of interface traps, have been also analyzed.