Effect of temperature treatments in different atmospheres on the crystallographic orientation and sheet resistance of Pt/Ti films on silicon

In this study, the influence of a temperature annealing process on the crystallographic orientation and sheet resistance of Pt/Ti films is investigated. Varying parameters are the annealing temperatures ranging between 450°C and 700°C and the atmosphere of the annealing process, which consists of either air, forming gas and argon gas. The thickness of the Pt/Ti film and the time of the annealing process are kept the same for all the experiments. A slight improvement of the (111) orientation of the platinum film was obtained for T=500°C in forming gas and in air. For temperature greater than 600°C the quality of the films were dramatically reduced.