Fast evaluation of continuous-RX impact on performance for strained FDSOI

UTBB-FDSOI device performance can be enhanced by stress engineering, especially thanks SiGe channel in pMOS [1]. SiGe channels induce strong local layout effects [2, 3] which are mainly due to stress relaxation during STI process [2]. In this study, we propose a TCAD simulation methodology to evaluate stress relaxation in standard active regions but also in Continuous-RX design structures. Finally, analytical model is provided to assess Continuous-RX design structure performance.