Circuit-aging modeling based on dynamic MOSFET degradation and its verification

The reported investigation aims at developing a compact model for circuit-aging simulation. The model considers dynamic trap-density increase during circuit operation in a consistent way. The model has been applied to an SRAM cell, where it is believed that the NBTI effect dominates. Our simulation verifies that the hot-carrier effect has a compensating influence on the NBTI aging of SRAM cells.