W-Shape nanodiode controlled by surface states for THz detection

A novel geometry of self-switching diode (SSD) is presented: the W-Shape geometry. A numerical model to evaluate the DC performance of the W-Shape SSD fabricated on AlGaAs/GaAs heterostructures that contains a two-dimensional electron gas (2DEG) is employed by the manipulation of the surface-states in the device. With this geometry the possibility of modifying the charge distribution in the nano-channel from one- and zero-dimensions by applying voltage between electrodes is explored. The DC current-voltage characteristics of the W-Shape showed a rectifier behavior. It is demonstrated that by changing the geometrical parameters of the W-SSD, the threshold voltage can be reduced and eventually be employed as THz detectors.