Intrinsic Limits to Contact Resistivity in Transition Metal Dichalcogenides

Two-dimensional semiconductors provide excellent electrostatic control that is critical for scaled nodes. However, due to their lower dimensionality, contact resistance can be a limiting factor for performance of devices based on these materials. In this letter, we examine the intrinsic limits to contact resistance in 2-D semiconductors based on their band structure. It is found that for large enough doping concentration, contact resistance as outlined in the International Technology Road-map for Semiconductors road-map for high performance transistors can indeed be achieved.